Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature
- Authors
- Kim, Ji-Hong; Kim, Jae-Won; Roh, Ji-Hyung; Lee, Kyung-Ju; Do, Kang-Min; Shin, Ju-Hong; Koo, Sang-Mo; Moon, Byung-Moo
- Issue Date
- 10월-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Amorphous materials; Laser deposition; Dielectric properties; Electrical properties
- Citation
- MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.2923 - 2926
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 47
- Number
- 10
- Start Page
- 2923
- End Page
- 2926
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107293
- DOI
- 10.1016/j.materresbull.2012.04.134
- ISSN
- 0025-5408
- Abstract
- Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO2/50 nm-thick HfO2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO2/HfO2 showed a higher capacitance of 35 nF/cm(2) and a lower leakage current density of 4.6 nA/cm(2) than 200 nm-thick SiO2. The obtained saturation mobility (mu(sat)), threshold voltage (V-th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm(2) V-1 s(-1), 0.88 V. and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs. (C) 2012 Elsevier Ltd. All rights reserved.
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