Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction
DC Field | Value | Language |
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dc.contributor.author | Shin, Juhyeon | - |
dc.contributor.author | Shim, Jaewoo | - |
dc.contributor.author | Lee, Jongtaek | - |
dc.contributor.author | Choi, Seung-Ha | - |
dc.contributor.author | Jung, Woo-Shik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Roh, Yonghan | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-06T14:52:50Z | - |
dc.date.available | 2021-09-06T14:52:50Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107294 | - |
dc.description.abstract | In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of similar to 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 degrees C and 600 degrees C, a very high ON-current density (180-320 A/cm(2)), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 degrees C anneal, a fairly high ON/OFF-current ratio (7 x 10(2)) is also observed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/LED.2012.2210992 | - |
dc.identifier.scopusid | 2-s2.0-84866939099 | - |
dc.identifier.wosid | 000309364600010 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.33, no.10, pp.1363 - 1365 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 33 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1363 | - |
dc.citation.endPage | 1365 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | Germanium (Ge) | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordAuthor | indium-gallium-zinc-oxide (IGZO) | - |
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