Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction

Abstract

In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of similar to 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 degrees C and 600 degrees C, a very high ON-current density (180-320 A/cm(2)), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 degrees C anneal, a fairly high ON/OFF-current ratio (7 x 10(2)) is also observed.