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Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors

Authors
Cho, Song YunKang, Young HunJung, Jun-YoungNam, So YounLim, JongsunYoon, Sung CheolChoi, Dong HoonLee, Changjin
Issue Date
25-9월-2012
Publisher
AMER CHEMICAL SOC
Keywords
thin-film transistor; zinc oxide; nanoparticle/precursor ink; low-temperature process
Citation
CHEMISTRY OF MATERIALS, v.24, no.18, pp.3517 - 3524
Indexed
SCIE
SCOPUS
Journal Title
CHEMISTRY OF MATERIALS
Volume
24
Number
18
Start Page
3517
End Page
3524
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/107435
DOI
10.1021/cm2036234
ISSN
0897-4756
Abstract
Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm(2) V-1 s(-1) and an on/off ratio of 5.89 x 10(8) even at low processing temperature of 250 degrees C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.
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