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Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

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dc.contributor.authorJeong, Seong-Guk-
dc.contributor.authorPark, Hyung-Youl-
dc.contributor.authorLim, Myung-Hoon-
dc.contributor.authorJung, Woo-Shik-
dc.contributor.authorYu, Hyun-Yong-
dc.contributor.authorRoh, Yonghan-
dc.contributor.authorPark, Jin-Hong-
dc.date.accessioned2021-09-06T15:50:46Z-
dc.date.available2021-09-06T15:50:46Z-
dc.date.created2021-06-18-
dc.date.issued2012-09-
dc.identifier.issn1566-1199-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/107493-
dc.description.abstractIn this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 degrees C in N-2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced. (C) 2012 Elsevier B. V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectTEMPERATURE-
dc.subjectMORPHOLOGY-
dc.subjectINJECTION-
dc.subjectCONTACT-
dc.titleEffect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions-
dc.typeArticle-
dc.contributor.affiliatedAuthorYu, Hyun-Yong-
dc.identifier.doi10.1016/j.orgel.2012.05.030-
dc.identifier.scopusid2-s2.0-84861674973-
dc.identifier.wosid000306107200004-
dc.identifier.bibliographicCitationORGANIC ELECTRONICS, v.13, no.9, pp.1511 - 1515-
dc.relation.isPartOfORGANIC ELECTRONICS-
dc.citation.titleORGANIC ELECTRONICS-
dc.citation.volume13-
dc.citation.number9-
dc.citation.startPage1511-
dc.citation.endPage1515-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusMORPHOLOGY-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusCONTACT-
dc.subject.keywordAuthorPentacene-
dc.subject.keywordAuthorFermi-level pinning-
dc.subject.keywordAuthorMetal-pentacene-
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