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Multi-Valued Planar Hall Resistance Manipulated by Current Induced Magnetic Field in Fe Films Grown on GaAs(001) Substrates
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Khym, Sungwon | - |
| dc.contributor.author | Yoo, Taehee | - |
| dc.contributor.author | Lee, Hakjoon | - |
| dc.contributor.author | Lee, Sangyeop | - |
| dc.contributor.author | Lee, Sanghoon | - |
| dc.contributor.author | Liu, Xinyu | - |
| dc.contributor.author | Furdyna, Jacek K. | - |
| dc.contributor.author | Lee, Dong Uk | - |
| dc.contributor.author | Kim, Eun Kyu | - |
| dc.date.accessioned | 2021-09-06T15:53:28Z | - |
| dc.date.available | 2021-09-06T15:53:28Z | - |
| dc.date.created | 2021-06-18 | - |
| dc.date.issued | 2012-09 | - |
| dc.identifier.issn | 1882-0778 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107509 | - |
| dc.description.abstract | A Hall device was fabricated from single-crystal Fe film having two in-plane magnetic easy axes. Planar Hall resistance measured by sequential application of current pulses to the metal strip that was deposited on the top of a Hall bar showed a hysteresis similar to that observed by scanning an external magnetic field. It was shown that discrete Hall resistance values in the hysteresis, which correspond to specific multidomain structures in Fe film, can be created by the application of appropriate sequences of current pulses to the metal strip, and can thus be used for read/write logic applications. (C) 2012 The Japan Society of Applied Physics | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
| dc.subject | GIANT MAGNETORESISTANCE | - |
| dc.subject | ROOM-TEMPERATURE | - |
| dc.subject | MEMORY | - |
| dc.title | Multi-Valued Planar Hall Resistance Manipulated by Current Induced Magnetic Field in Fe Films Grown on GaAs(001) Substrates | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
| dc.identifier.doi | 10.1143/APEX.5.093004 | - |
| dc.identifier.scopusid | 2-s2.0-84866419688 | - |
| dc.identifier.wosid | 000308694100024 | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.5, no.9 | - |
| dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
| dc.citation.title | APPLIED PHYSICS EXPRESS | - |
| dc.citation.volume | 5 | - |
| dc.citation.number | 9 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | GIANT MAGNETORESISTANCE | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | MEMORY | - |
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