193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors
DC Field | Value | Language |
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dc.contributor.author | Wang, Xiaotie | - |
dc.contributor.author | Lo, Chien-Fong | - |
dc.contributor.author | Liu, Lu | - |
dc.contributor.author | Cuervo, Camilo V. | - |
dc.contributor.author | Fan, Ren | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Gila, Brent | - |
dc.contributor.author | Johnson, Michael R. | - |
dc.contributor.author | Zhou, Lin | - |
dc.contributor.author | Smith, David J. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Laboutin, Oleg | - |
dc.contributor.author | Cao, Yu | - |
dc.contributor.author | Johnson, Jerry W. | - |
dc.date.accessioned | 2021-09-06T16:19:13Z | - |
dc.date.available | 2021-09-06T16:19:13Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107659 | - |
dc.description.abstract | AlGaN/GaN HEMTs grown on both-side-polished sapphire substrates were successfully lifted-off with a 193-nm UV excimer laser system. The photon energy of the 193 nm laser is larger than the band gap of AlN and thus it can be used to lift-off AlGaN HEMT structures with AlN or AlGaN interfacial layers grown on sapphire substrates prior to growth of the GaN buffer layers. The lifted-off HEMT chip was warped and showed 25-42% reduction of the saturation drain current. There was no degradation observed either in the forward or reverse gate current-voltage (I-V) characteristics or on the drain punch-through voltage. Based on comparisons of cross-sectional electron micrographs, no additional dislocations were created in the HEMT structures after the laser lift-off process. Reduction in saturation drain current was attributed to relaxation of the lifted-off HEMT structures. Newton's rings and Raman spectrum E2 peak shifts were used to estimate the strain relaxation of the laser lifted-off samples. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | FREESTANDING GAN | - |
dc.subject | SAPPHIRE | - |
dc.title | 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.4751278 | - |
dc.identifier.scopusid | 2-s2.0-84866480053 | - |
dc.identifier.wosid | 000309073500013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.5 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 30 | - |
dc.citation.number | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | FREESTANDING GAN | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | buffer layers | - |
dc.subject.keywordAuthor | electrical conductivity | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | high electron mobility transistors | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | laser materials processing | - |
dc.subject.keywordAuthor | Raman spectra | - |
dc.subject.keywordAuthor | stress relaxation | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
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