193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors
- Authors
- Wang, Xiaotie; Lo, Chien-Fong; Liu, Lu; Cuervo, Camilo V.; Fan, Ren; Pearton, Stephen J.; Gila, Brent; Johnson, Michael R.; Zhou, Lin; Smith, David J.; Kim, Jihyun; Laboutin, Oleg; Cao, Yu; Johnson, Jerry W.
- Issue Date
- 9월-2012
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- aluminium compounds; buffer layers; electrical conductivity; gallium compounds; high electron mobility transistors; III-V semiconductors; laser materials processing; Raman spectra; stress relaxation; transmission electron microscopy; wide band gap semiconductors
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 30
- Number
- 5
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107659
- DOI
- 10.1116/1.4751278
- ISSN
- 1071-1023
- Abstract
- AlGaN/GaN HEMTs grown on both-side-polished sapphire substrates were successfully lifted-off with a 193-nm UV excimer laser system. The photon energy of the 193 nm laser is larger than the band gap of AlN and thus it can be used to lift-off AlGaN HEMT structures with AlN or AlGaN interfacial layers grown on sapphire substrates prior to growth of the GaN buffer layers. The lifted-off HEMT chip was warped and showed 25-42% reduction of the saturation drain current. There was no degradation observed either in the forward or reverse gate current-voltage (I-V) characteristics or on the drain punch-through voltage. Based on comparisons of cross-sectional electron micrographs, no additional dislocations were created in the HEMT structures after the laser lift-off process. Reduction in saturation drain current was attributed to relaxation of the lifted-off HEMT structures. Newton's rings and Raman spectrum E2 peak shifts were used to estimate the strain relaxation of the laser lifted-off samples.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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