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Flexible glucose sensor using CVD-grown graphene-based field effect transistor

Authors
Kwak, Yeon HwaChoi, Dong SooKim, Ye NaKim, HyeongkeunYoon, Dae HoAhn, Sang-SikYang, Ji-WoonYang, Woo SeokSeo, Sungkyu
Issue Date
8월-2012
Publisher
ELSEVIER ADVANCED TECHNOLOGY
Keywords
Flexible; Biosensor; CVD-grown graphene; Field effect transistor; Glucose; H2O2
Citation
BIOSENSORS & BIOELECTRONICS, v.37, no.1, pp.82 - 87
Indexed
SCIE
SCOPUS
Journal Title
BIOSENSORS & BIOELECTRONICS
Volume
37
Number
1
Start Page
82
End Page
87
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/107754
DOI
10.1016/j.bios.2012.04.042
ISSN
0956-5663
Abstract
A flexible glucose sensor using a CVD-grown graphene-based field-effect-transistor (FEE) is demonstrated. The CVD-grown graphene was functionalized with linker molecules in order to immobilize the enzymes that induce the catalytic response of glucose. Polyethylene terephthalate (PET) was employed as the substrate material to realize a flexible sensor. The fabricated graphene-based FET sensor showed ambipolar transfer characteristics. Through measurements of the Dirac point shift and differential drain-source current, the fabricated FEE sensor could detect glucose levels in the range of 3.3-10.9 mM, which mostly covers the reference range of medical examination or screen test for diabetes diagnostic. This CVD-grown graphene-based FET sensor, which provides excellent fitting to a model curve even when deformed, high resolution, and continuous real-time monitoring, holds great promise, especially for portable, wearable, and implantable glucose level monitoring applications. (C) 2012 Elsevier B.V. All rights reserved.
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