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Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Sungeun | - |
| dc.contributor.author | Kim, Young Do | - |
| dc.contributor.author | Bae, Soohyun | - |
| dc.contributor.author | Kim, Seongtak | - |
| dc.contributor.author | Song, Jooyong | - |
| dc.contributor.author | Kim, Hyunho | - |
| dc.contributor.author | Park, Hyo Min | - |
| dc.contributor.author | Kim, Soomin | - |
| dc.contributor.author | Tark, Sung Ju | - |
| dc.contributor.author | Kim, Donghwan | - |
| dc.date.accessioned | 2021-09-06T17:09:51Z | - |
| dc.date.available | 2021-09-06T17:09:51Z | - |
| dc.date.created | 2021-06-18 | - |
| dc.date.issued | 2012-08 | - |
| dc.identifier.issn | 1598-9623 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107778 | - |
| dc.description.abstract | N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | KOREAN INST METALS MATERIALS | - |
| dc.subject | SILICON-WAFERS | - |
| dc.title | Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
| dc.identifier.doi | 10.1007/s12540-012-4022-y | - |
| dc.identifier.scopusid | 2-s2.0-84869178377 | - |
| dc.identifier.wosid | 000308102800027 | - |
| dc.identifier.bibliographicCitation | METALS AND MATERIALS INTERNATIONAL, v.18, no.4, pp.731 - 734 | - |
| dc.relation.isPartOf | METALS AND MATERIALS INTERNATIONAL | - |
| dc.citation.title | METALS AND MATERIALS INTERNATIONAL | - |
| dc.citation.volume | 18 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 731 | - |
| dc.citation.endPage | 734 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART001685892 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
| dc.subject.keywordPlus | SILICON-WAFERS | - |
| dc.subject.keywordAuthor | aluminium rear emitter | - |
| dc.subject.keywordAuthor | Si solar cells | - |
| dc.subject.keywordAuthor | junction properties | - |
| dc.subject.keywordAuthor | rapid thermal process | - |
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