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Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells
- Authors
- Park, Sungeun; Kim, Young Do; Bae, Soohyun; Kim, Seongtak; Song, Jooyong; Kim, Hyunho; Park, Hyo Min; Kim, Soomin; Tark, Sung Ju; Kim, Donghwan
- Issue Date
- 8월-2012
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- aluminium rear emitter; Si solar cells; junction properties; rapid thermal process
- Citation
- METALS AND MATERIALS INTERNATIONAL, v.18, no.4, pp.731 - 734
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- METALS AND MATERIALS INTERNATIONAL
- Volume
- 18
- Number
- 4
- Start Page
- 731
- End Page
- 734
- ISSN
- 1598-9623
- Abstract
- N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.
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