Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells
DC Field | Value | Language |
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dc.contributor.author | Song, Joo Yong | - |
dc.contributor.author | Park, Sungeun | - |
dc.contributor.author | Kim, Young Do | - |
dc.contributor.author | Kang, Min Gu | - |
dc.contributor.author | Tark, Sung Ju | - |
dc.contributor.author | Kwon, Soonwoo | - |
dc.contributor.author | Yoon, Sewang | - |
dc.contributor.author | Kim, Donghwan | - |
dc.date.accessioned | 2021-09-06T17:13:22Z | - |
dc.date.available | 2021-09-06T17:13:22Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.issn | 1598-9623 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107799 | - |
dc.description.abstract | Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO2 layer (80 nm)/Si, and (3) SiNX layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 A degrees C on bare Si and at ca. 690 A degrees C on the SiO2 layer. However, the SiO2 did not withstand annealing at higher temperatures. The SiNX layer showed no Al-BSF region in samples annealed at up to 760 A degrees C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | SURFACE PASSIVATION | - |
dc.title | Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1007/s12540-012-4020-0 | - |
dc.identifier.scopusid | 2-s2.0-84869182217 | - |
dc.identifier.wosid | 000308102800021 | - |
dc.identifier.bibliographicCitation | METALS AND MATERIALS INTERNATIONAL, v.18, no.4, pp.699 - 703 | - |
dc.relation.isPartOf | METALS AND MATERIALS INTERNATIONAL | - |
dc.citation.title | METALS AND MATERIALS INTERNATIONAL | - |
dc.citation.volume | 18 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 699 | - |
dc.citation.endPage | 703 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001685878 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordAuthor | aluminum | - |
dc.subject.keywordAuthor | silicon nitride | - |
dc.subject.keywordAuthor | local contact | - |
dc.subject.keywordAuthor | rear passivation | - |
dc.subject.keywordAuthor | back surface field | - |
dc.subject.keywordAuthor | solar cell | - |
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