Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells
- Authors
- Song, Joo Yong; Park, Sungeun; Kim, Young Do; Kang, Min Gu; Tark, Sung Ju; Kwon, Soonwoo; Yoon, Sewang; Kim, Donghwan
- Issue Date
- 8월-2012
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- aluminum; silicon nitride; local contact; rear passivation; back surface field; solar cell
- Citation
- METALS AND MATERIALS INTERNATIONAL, v.18, no.4, pp.699 - 703
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- METALS AND MATERIALS INTERNATIONAL
- Volume
- 18
- Number
- 4
- Start Page
- 699
- End Page
- 703
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107799
- DOI
- 10.1007/s12540-012-4020-0
- ISSN
- 1598-9623
- Abstract
- Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO2 layer (80 nm)/Si, and (3) SiNX layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 A degrees C on bare Si and at ca. 690 A degrees C on the SiO2 layer. However, the SiO2 did not withstand annealing at higher temperatures. The SiNX layer showed no Al-BSF region in samples annealed at up to 760 A degrees C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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