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A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology
- Authors
- Kim, Dong-Hyun; Rieh, Jae-Sung
- Issue Date
- 8월-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Gain; millimeter-wave circuits; mixers
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.22, no.8, pp.409 - 411
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 22
- Number
- 8
- Start Page
- 409
- End Page
- 411
- ISSN
- 1531-1309
- Abstract
- A 135 GHz G(m)-boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18-mu m SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P-1 dB of -20 dBm and LO-RF isolation of 31 dB. The entire circuit draws 1.3 mA from a 3 V supply. The fabricated mixer occupies 0.23 x 0.54 mm(2) of chip area excluding pad region.
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