Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl-2/Ar Plasmas
DC Field | Value | Language |
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dc.contributor.author | Kwon, Kwang-Ho | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Kang, Sungchil | - |
dc.contributor.author | Jang, Hanbyeol | - |
dc.contributor.author | Yang, Hyungjin | - |
dc.contributor.author | Kim, Kwangsoo | - |
dc.date.accessioned | 2021-09-06T17:55:07Z | - |
dc.date.available | 2021-09-06T17:55:07Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107972 | - |
dc.description.abstract | The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl3/Cl-2/Ar inductively coupled plasma at a fixed gas pressure (6 mTorr) were investigated. It was found that the substitution of Cl-2 for BCl3 in the BCl3/Cl-2/Ar gas mixture results in the maximum IGZO etching rate in 40% BCl3 + 40% Cl-2 + 20% Ar. In both Cl-2-rich (20% BCl3 + 60% Cl-2 + 20% Ar) and BCl3-rich (60% BCl3 + 20% Cl-2 + 20% Ar) plasmas, increases in input power (500-800W) and bias power (100-250W) cause the monotonic acceleration of the IGZO etching process. Plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling provided the data on plasma parameters and fluxes of active species. It was concluded that the IGZO etching process is not limited by the ion-surface interaction kinetics as well as involves BClx radicals. (C) 2012 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | MIXING-RATIO | - |
dc.subject | GLOBAL-MODEL | - |
dc.subject | POLYSILICON | - |
dc.subject | DISCHARGES | - |
dc.subject | O-2 | - |
dc.title | Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl-2/Ar Plasmas | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.contributor.affiliatedAuthor | Yang, Hyungjin | - |
dc.identifier.doi | 10.1143/JJAP.51.076201 | - |
dc.identifier.scopusid | 2-s2.0-84863808565 | - |
dc.identifier.wosid | 000306190500036 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.7 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 51 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | MIXING-RATIO | - |
dc.subject.keywordPlus | GLOBAL-MODEL | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | DISCHARGES | - |
dc.subject.keywordPlus | O-2 | - |
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