Analysis of a metal filling and liner formation mechanism of the blind via with nano-Ag particles for TSV (through silicon via) interconnection

Abstract

We investigated a metal filling and liner formation mechanism with a nano-Ag particle for the blind Si via, which is used in the via first process of through silicon via (TSV) interconnection. Using the deep reactive ion etching process, we produced the blind Si via (which is called the blind via hole or via) with a nearly vertical profile. The diameter and depth of the blind Si via were about 10 and 71 mu m, respectively. The blind via holes were filled with a nano-Ag particle solution to form a metal plug or a metal liner. At this time, the Ag filling properties were monitored as a function of the volatilization rate of the Ag particle solution in the evacuating chamber. In the fast volatilization of the nano-Ag particle solution, an Ag liner formed on the inner wall of via holes. Meanwhile, both an Ag liner at the sidewall and the Ag plug at the bottom were obtained by the slow volatilization process. Finally, blind via holes fully filled with nano-Ag particles were obtained using four repetitions of the slow volatilization filling process. The proposed TSV filling process can fill large-diameter via holes over 100 mu m without a seed layer and chemical mechanical planarization for TSV interconnection at low temperature. This is a simple and cost-effective TSV filling process.