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A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance
- Issue Date
- 7월-2012
- Publisher
- KOREAN INST ELECTR ENG
- Keywords
- IGBTs; Floating island; On-resistance; Breakdown voltage; Power device
- Citation
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.7, no.4, pp.601 - 605
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
- Volume
- 7
- Number
- 4
- Start Page
- 601
- End Page
- 605
- ISSN
- 1975-0102
- Abstract
- Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on-state voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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