Effects of semiconductor processing chemicals on conductivity of graphene
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Chung Wei | - |
dc.contributor.author | Ren, F. | - |
dc.contributor.author | Chi, Gou-Chung | - |
dc.contributor.author | Hung, S. C. | - |
dc.contributor.author | Huang, Y. P. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Kravchenko, Ivan | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.date.accessioned | 2021-09-06T18:18:56Z | - |
dc.date.available | 2021-09-06T18:18:56Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108082 | - |
dc.description.abstract | Graphene layers on SiO2/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids, bases (ammonium hydroxide), UV ozone, H2O, and O-2 plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect, while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 h. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4732517] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | BILAYER GRAPHENE | - |
dc.subject | TUNABLE BANDGAP | - |
dc.subject | LAYER GRAPHENE | - |
dc.subject | LARGE-AREA | - |
dc.subject | FILMS | - |
dc.subject | OXIDE | - |
dc.subject | TRANSPARENT | - |
dc.subject | MOLECULES | - |
dc.subject | SIO2 | - |
dc.title | Effects of semiconductor processing chemicals on conductivity of graphene | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.4732517 | - |
dc.identifier.scopusid | 2-s2.0-84864201968 | - |
dc.identifier.wosid | 000306750700013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 30 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BILAYER GRAPHENE | - |
dc.subject.keywordPlus | TUNABLE BANDGAP | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | MOLECULES | - |
dc.subject.keywordPlus | SIO2 | - |
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