Effects of semiconductor processing chemicals on conductivity of graphene
- Authors
- Chen, Chung Wei; Ren, F.; Chi, Gou-Chung; Hung, S. C.; Huang, Y. P.; Kim, Jihyun; Kravchenko, Ivan; Pearton, Stephen J.
- Issue Date
- 7월-2012
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 30
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108082
- DOI
- 10.1116/1.4732517
- ISSN
- 1071-1023
- Abstract
- Graphene layers on SiO2/Si substrates were exposed to chemicals or gases commonly used in semiconductor fabrication processes, including solvents (isopropanol, acetone), acids, bases (ammonium hydroxide), UV ozone, H2O, and O-2 plasmas. The recovery of the initial graphene properties after these exposures was monitored by measuring both the layer resistance and Raman 2D peak position as a function of time in air or vacuum. Solvents and UV ozone were found to have the least affect, while oxygen plasma exposure caused an increase of resistance of more than 3 orders of magnitude. Recovery is accelerated under vacuum but changes can persist for more than 5 h. Careful design of fabrication schemes involving graphene is necessary to minimize these interactions with common processing chemicals. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4732517]
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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