Nanocrystalline GaZnO Films for Transparent Electrode to Silicon Carbide

Abstract

Nanocrystalline 2% Ga doped zinc oxide (GaZnO) thin films were epitaxially deposited on n-type 4H-SiC (0001) by a pulsed laser deposition (PLD) at different substrate temperatures of 250, 400, and 550 degrees C, respectively. Structural and electrical properties of nanocrystalline GaZnO thin film on 4H-SiC were investigated by using X-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, transmission line method (TLM), and Auger electron spectroscopy (AES). The nanocrystalline GaZnO film deposited at 400 degrees C show the lowest resistivity of 3.3 x 10(-4) Omega cm, and highly c-axis oriented crystalline quality with being sharper and higher diffraction angle, which result in. The specific contact resistance (rho(c)), measured from the Au/Ti/GaZnO/SiC of similar to 0.05 Omega cm(2). The relative amount of activated Ga3+ ions was 2.02% in GaZnO film by AES measurement.