Nanocrystalline GaZnO Films for Transparent Electrode to Silicon Carbide
- Authors
- Lee, Jungho; Kim, Ji-Hong; Do, Kang-Min; Moon, Byung-Moo; Lee, Ji-Hoon; Koo, Sang-Mo
- Issue Date
- 6월-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- GaZnO; SiC; PLD; AES; XRD
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.7, no.3, pp.260 - 264
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 7
- Number
- 3
- Start Page
- 260
- End Page
- 264
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108258
- DOI
- 10.1166/jno.2012.1304
- ISSN
- 1555-130X
- Abstract
- Nanocrystalline 2% Ga doped zinc oxide (GaZnO) thin films were epitaxially deposited on n-type 4H-SiC (0001) by a pulsed laser deposition (PLD) at different substrate temperatures of 250, 400, and 550 degrees C, respectively. Structural and electrical properties of nanocrystalline GaZnO thin film on 4H-SiC were investigated by using X-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, transmission line method (TLM), and Auger electron spectroscopy (AES). The nanocrystalline GaZnO film deposited at 400 degrees C show the lowest resistivity of 3.3 x 10(-4) Omega cm, and highly c-axis oriented crystalline quality with being sharper and higher diffraction angle, which result in. The specific contact resistance (rho(c)), measured from the Au/Ti/GaZnO/SiC of similar to 0.05 Omega cm(2). The relative amount of activated Ga3+ ions was 2.02% in GaZnO film by AES measurement.
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