Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes
DC Field | Value | Language |
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dc.contributor.author | Lim, Myung-Hoon | - |
dc.contributor.author | Lee, In-Yeal | - |
dc.contributor.author | Jeong, Seong-Guk | - |
dc.contributor.author | Lee, Jongtaek | - |
dc.contributor.author | Jung, Woo-Shik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Kim, Gil-Ho | - |
dc.contributor.author | Roh, Yonghan | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-06T19:12:48Z | - |
dc.date.available | 2021-09-06T19:12:48Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108275 | - |
dc.description.abstract | In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device. (C) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | CONTACT | - |
dc.title | Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.orgel.2012.03.009 | - |
dc.identifier.scopusid | 2-s2.0-84859294163 | - |
dc.identifier.wosid | 000302961200019 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.13, no.6, pp.1056 - 1059 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1056 | - |
dc.citation.endPage | 1059 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordAuthor | Asymmetric S/D | - |
dc.subject.keywordAuthor | Pentacene | - |
dc.subject.keywordAuthor | OTFT | - |
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