Single-String Carbon Nanotube Field Effect Transistors Fabricated by Two-Step Dielectrophoresis
DC Field | Value | Language |
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dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Hwang, Jong Seung | - |
dc.contributor.author | Yu, Yun Seop | - |
dc.contributor.author | Kang, Myung Gil | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.date.accessioned | 2021-09-06T19:17:24Z | - |
dc.date.available | 2021-09-06T19:17:24Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108297 | - |
dc.description.abstract | Carbon nanotube field effect transistors (CNT FETs) with a long, single channel are an essential ingredient for gas and bio sensors, because a single spot modification of the channel can change the conductivity of the whole device. Herein, the two-step dielectrophoresis (DEP) technique was used to fabricate single string, single wall CNT FETs with a length longer than 10 mu m. The single string FET showed an on/off ratio and transconductance which are larger than those of the network FET on the same substrate. The observed characteristics were explained by a circuit simulation. We also demonstrated that our method could be applied to flexible substrates. (C) 2012 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | AC-DIELECTROPHORESIS | - |
dc.subject | TRANSITION | - |
dc.subject | DEPOSITION | - |
dc.subject | GROWTH | - |
dc.subject | TIP | - |
dc.title | Single-String Carbon Nanotube Field Effect Transistors Fabricated by Two-Step Dielectrophoresis | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1143/JJAP.51.06FE02 | - |
dc.identifier.scopusid | 2-s2.0-84863334203 | - |
dc.identifier.wosid | 000306189800049 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 51 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | AC-DIELECTROPHORESIS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | TIP | - |
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