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Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches
- Issue Date
- Jun-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Notched magnetic nanowire; Domain wall motion; Differential resistance; Micromagnetic simulation
- Citation
- SOLID STATE COMMUNICATIONS, v.152, no.12, pp.1004 - 1007
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 152
- Number
- 12
- Start Page
- 1004
- End Page
- 1007
- ISSN
- 0038-1098
- Abstract
- Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 mu m. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger. (C) 2012 Elsevier Ltd. All rights reserved.
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Related Researcher
- Kim, Young Keun
- College of Engineering (Department of Materials Science and Engineering)