Micro-Raman scattering and TEM measurements of crystallization in amorphous and nanocrystalline silicon
- Authors
- Lyou, Jong H.
- Issue Date
- 5월-2012
- Publisher
- SPRINGER
- Keywords
- Micro-Raman spectra; Transmission electron micrographs; Amorphous silicon; Nanocrystalline silicon; Hydrogenation; Laser annealing; Crystallization
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.107, no.2, pp.503 - 508
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Volume
- 107
- Number
- 2
- Start Page
- 503
- End Page
- 508
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108469
- DOI
- 10.1007/s00339-012-6781-1
- ISSN
- 0947-8396
- Abstract
- In this report, we study crystallization and Raman spectral and transmission electron microscopy (TEM) changes in amorphous and nanocrystalline Si. Micro-Raman spectra combined with TEM show that considerable crystallization occurs in a-Si:H and a-Si(Al) (the structure of aluminum-diffused amorphous Si/Al/c-Si), but no additional crystallization was observed for nc-Si:H, after the exposure to a laser or accelerating electrons. Meanwhile, moving toward lower or higher energy for a-Si:H and nc-Si:H, by contrast, the Raman shift appeared for a-Si(Al) as if it were for single-crystalline Si, in which it remained constant at one energy, as the laser intensity increased or decreased.
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Collections - College of Science and Technology > Department of Display and Semiconductor Physics > 1. Journal Articles
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