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Micro-Raman scattering and TEM measurements of crystallization in amorphous and nanocrystalline silicon

Authors
Lyou, Jong H.
Issue Date
5월-2012
Publisher
SPRINGER
Keywords
Micro-Raman spectra; Transmission electron micrographs; Amorphous silicon; Nanocrystalline silicon; Hydrogenation; Laser annealing; Crystallization
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.107, no.2, pp.503 - 508
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume
107
Number
2
Start Page
503
End Page
508
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/108469
DOI
10.1007/s00339-012-6781-1
ISSN
0947-8396
Abstract
In this report, we study crystallization and Raman spectral and transmission electron microscopy (TEM) changes in amorphous and nanocrystalline Si. Micro-Raman spectra combined with TEM show that considerable crystallization occurs in a-Si:H and a-Si(Al) (the structure of aluminum-diffused amorphous Si/Al/c-Si), but no additional crystallization was observed for nc-Si:H, after the exposure to a laser or accelerating electrons. Meanwhile, moving toward lower or higher energy for a-Si:H and nc-Si:H, by contrast, the Raman shift appeared for a-Si(Al) as if it were for single-crystalline Si, in which it remained constant at one energy, as the laser intensity increased or decreased.
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