Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
DC Field | Value | Language |
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dc.contributor.author | Lo, Chien-Fong | - |
dc.contributor.author | Liu, L. | - |
dc.contributor.author | Kang, T. S. | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Schwarz, C. | - |
dc.contributor.author | Flitsiyan, E. | - |
dc.contributor.author | Chernyak, L. | - |
dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Yun, Sang Pil | - |
dc.contributor.author | Laboutin, O. | - |
dc.contributor.author | Cao, Y. | - |
dc.contributor.author | Johnson, J. W. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-09-06T20:10:47Z | - |
dc.date.available | 2021-09-06T20:10:47Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108474 | - |
dc.description.abstract | The dc characteristics of InAlN/GaN high electron mobility transistors were measured before and after irradiation with 5 MeV protons at doses up to 2 x 10(15) cm(-2). The on/off ratio degraded by two orders of magnitude for the highest dose, while the subthreshold slope increased from 77 to 122 mV/decade under these conditions. There was little change in transconductance or gate or drain currents for doses up to 2 x 10(13) cm(-2), but for the highest dose the drain current and transconductance decreased by, similar to 40% while the reverse gate current increased by a factor of similar to 6. The minority carrier diffusion length was around 1 mu m independent of proton dose. The InAlN/GaN heterostructure is at least as radiation hard as its AlGaN/GaN counterpart. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3698402] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | MGO | - |
dc.title | Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.3698402 | - |
dc.identifier.wosid | 000305042000012 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.3 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 30 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MGO | - |
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