Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
- Authors
- Lo, Chien-Fong; Liu, L.; Kang, T. S.; Ren, Fan; Schwarz, C.; Flitsiyan, E.; Chernyak, L.; Kim, Hong-Yeol; Kim, Jihyun; Yun, Sang Pil; Laboutin, O.; Cao, Y.; Johnson, J. W.; Pearton, S. J.
- Issue Date
- 5월-2012
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.3
- Indexed
- SCIE
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 30
- Number
- 3
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108474
- DOI
- 10.1116/1.3698402
- ISSN
- 1071-1023
- Abstract
- The dc characteristics of InAlN/GaN high electron mobility transistors were measured before and after irradiation with 5 MeV protons at doses up to 2 x 10(15) cm(-2). The on/off ratio degraded by two orders of magnitude for the highest dose, while the subthreshold slope increased from 77 to 122 mV/decade under these conditions. There was little change in transconductance or gate or drain currents for doses up to 2 x 10(13) cm(-2), but for the highest dose the drain current and transconductance decreased by, similar to 40% while the reverse gate current increased by a factor of similar to 6. The minority carrier diffusion length was around 1 mu m independent of proton dose. The InAlN/GaN heterostructure is at least as radiation hard as its AlGaN/GaN counterpart. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3698402]
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