Effect of r-plane (1-102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11-20) GaN
DC Field | Value | Language |
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dc.contributor.author | Kim, Ji Hoon | - |
dc.contributor.author | Park, Jung Ho | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.date.accessioned | 2021-09-06T20:32:33Z | - |
dc.date.available | 2021-09-06T20:32:33Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108602 | - |
dc.description.abstract | We studied the growth and the characteristics of nonpolar Si-doped a-plane GaN grown on r-plane sapphire substrates with different off-cut angles which were changed in the range of -0.2A degrees similar to +0.4A degrees. Samples grown by using -0.2A degrees and +0.2A degrees off-cut angles showed triangular pit-free and smooth surfaces, which resulted from enhanced lateral growth owing to the epitaxial films having a Ga face. On the other hand, the sample grown by using +0.4A degrees off-cut angles revealed a high density of pits and low crystalline quality due to a high density of dislocations. The strain determined by using calculations with the lattice parameters also showed a dependence on the off-cut angles. We expect r-plane sapphire with off-cut angles in the range of -0.2A degrees similar to+0.2A degrees to be very effective for improving the crystalline quality and the surface morphology of a-plane GaN. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | THREADING DISLOCATION REDUCTION | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | LATERAL OVERGROWTH | - |
dc.subject | QUANTUM-WELL | - |
dc.subject | IN-SITU | - |
dc.subject | FILMS | - |
dc.subject | LAYERS | - |
dc.title | Effect of r-plane (1-102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11-20) GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jung Ho | - |
dc.identifier.doi | 10.3938/jkps.60.1649 | - |
dc.identifier.scopusid | 2-s2.0-84863609767 | - |
dc.identifier.wosid | 000304627500034 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.10, pp.1649 - 1655 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 60 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1649 | - |
dc.citation.endPage | 1655 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001667162 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | THREADING DISLOCATION REDUCTION | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | LATERAL OVERGROWTH | - |
dc.subject.keywordPlus | QUANTUM-WELL | - |
dc.subject.keywordPlus | IN-SITU | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | a-plane GaN | - |
dc.subject.keywordAuthor | Metal Organic Chemical Vapor Deposition | - |
dc.subject.keywordAuthor | Off-cut angle | - |
dc.subject.keywordAuthor | Strain | - |
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