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Resistive switching memory properties of layer-by-layer assembled enzyme multilayers

Authors
Baek, HyunheeLee, ChanwooLim, Kwang-ilCho, Jinhan
Issue Date
20-4월-2012
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.23, no.15
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
23
Number
15
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/108717
DOI
10.1088/0957-4484/23/15/155604
ISSN
0957-4484
Abstract
The properties of enzymes, which can cause reversible changes in currents through redox reactions in solution, are of fundamental and practical importance in bio-electrochemical applications. These redox properties of enzymes are often associated with their charge-trap sites. Here, we demonstrate that reversible changes in resistance in dried lysozyme (LYS) films can be generated by an externally applied voltage as a result of charge trap/release. Based on such changes, LYS can be used as resistive switching active material for nonvolatile memory devices. In this study, cationic LYS and anionic poly(styrene sulfonate) (PSS) layers were alternately deposited onto Pt-coated silicon substrates using a layer-by-layer assembly method. Then, top electrodes were deposited onto the top of LYS/PSS multilayers to complete the fabrication of the memory-like device. The LYS/PSS multilayer devices exhibited typical resistive switching characteristics with an ON/OFF current ratio above 10(2), a fast switching speed of 100 ns and stable performance. Furthermore, the insertion of insulating polyelectrolytes (PEs) between the respective LYS layers significantly enhanced the memory performance of the devices showing a high ON/OFF current ratio of similar to 10(6) and low levels of power consumption.
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공과대학 (화공생명공학과)
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