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Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin-Film Transistors
- Authors
- Kim, Minseok; Koo, Jae Bon; Baeg, Kang-Jun; Noh, Yong-Young; Yang, Yong Suk; Jung, Soon-Won; Ju, Byeong-Kwon; You, In-Kyu
- Issue Date
- 4월-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Curing Temperature; Nano-Silver Paste; OTFT; Reverse Offset Printing
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.4, pp.3272 - 3275
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 4
- Start Page
- 3272
- End Page
- 3275
- ISSN
- 1533-4880
- Abstract
- Silver (Ag) metal electrode having 20 mu m channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottom-contact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of similar to 10(-3) cm(2)/Vs, 0.36 V, and similar to 10(2), respectively.
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