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Silicon-Germanium multi-quantum well photodetectors in the near infrared

Authors
Onaran, EfeOnbasli, M. CengizYesilyurt, AlperYu, Hyun YongNayfeh, Ammar M.Okyay, Ali K.
Issue Date
26-3월-2012
Publisher
OPTICAL SOC AMER
Citation
OPTICS EXPRESS, v.20, no.7, pp.7608 - 7615
Indexed
SCIE
SCOPUS
Journal Title
OPTICS EXPRESS
Volume
20
Number
7
Start Page
7608
End Page
7615
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/108964
DOI
10.1364/OE.20.007608
ISSN
1094-4087
Abstract
Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of similar to 10 mA/cm(2) and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. (C)2012 Optical Society of America
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공과대학 (전기전자공학부)
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