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Role of Adsorbed H2O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors
- Issue Date
- 2월-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.5, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 5
- Number
- 2
- ISSN
- 1882-0778
- Abstract
- We investigated the variation of electrical performances of solution-processed zinc tin oxide thin-film transistors (ZTO TFTs) when their channel layer was exposed to ambient gases at room temperature. During our research, we observed that adsorption of H2O on the backchannel surface can act as an electron trap and/or donor, depending on the amount of H2O. In addition, we found that the abnormal behavior seen in the TFTs was caused by different rates of adsorption/desorption. Finally, the instability in the electrical characteristics of the ZTO TFTs caused by the ambient atmosphere can easily be reversed by vacuum seasoning. (C) 2012 The Japan Society of Applied Physics
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