A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells
DC Field | Value | Language |
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dc.contributor.author | Song, Jooyong | - |
dc.contributor.author | Park, Sungeun | - |
dc.contributor.author | Kwon, Soonwoo | - |
dc.contributor.author | Kim, Sungtak | - |
dc.contributor.author | Kim, Hyunho | - |
dc.contributor.author | Tark, Sung Ju | - |
dc.contributor.author | Yoon, Sewang | - |
dc.contributor.author | Kim, Donghwan | - |
dc.date.accessioned | 2021-09-06T23:17:39Z | - |
dc.date.available | 2021-09-06T23:17:39Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/109129 | - |
dc.description.abstract | The relationship between aluminum fire-through and the properties of a-SiNx:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films. Refractive index, density and deposition rate increased with increasing SiH4/NH3 ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiNx:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate. (C) 2011 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SILICON-NITRIDE | - |
dc.subject | SURFACE PASSIVATION | - |
dc.subject | BULK | - |
dc.title | A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.cap.2011.06.028 | - |
dc.identifier.scopusid | 2-s2.0-80054815509 | - |
dc.identifier.wosid | 000296525700058 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.12, no.1, pp.313 - 318 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 313 | - |
dc.citation.endPage | 318 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001629374 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON-NITRIDE | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | BULK | - |
dc.subject.keywordAuthor | Aluminum | - |
dc.subject.keywordAuthor | Silicon nitride | - |
dc.subject.keywordAuthor | Local contact | - |
dc.subject.keywordAuthor | Rear passivation | - |
dc.subject.keywordAuthor | Back surface field | - |
dc.subject.keywordAuthor | Solar cell | - |
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