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A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells

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dc.contributor.authorSong, Jooyong-
dc.contributor.authorPark, Sungeun-
dc.contributor.authorKwon, Soonwoo-
dc.contributor.authorKim, Sungtak-
dc.contributor.authorKim, Hyunho-
dc.contributor.authorTark, Sung Ju-
dc.contributor.authorYoon, Sewang-
dc.contributor.authorKim, Donghwan-
dc.date.accessioned2021-09-06T23:17:39Z-
dc.date.available2021-09-06T23:17:39Z-
dc.date.created2021-06-18-
dc.date.issued2012-01-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/109129-
dc.description.abstractThe relationship between aluminum fire-through and the properties of a-SiNx:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films. Refractive index, density and deposition rate increased with increasing SiH4/NH3 ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiNx:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate. (C) 2011 Elsevier B. V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectSILICON-NITRIDE-
dc.subjectSURFACE PASSIVATION-
dc.subjectBULK-
dc.titleA study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Donghwan-
dc.identifier.doi10.1016/j.cap.2011.06.028-
dc.identifier.scopusid2-s2.0-80054815509-
dc.identifier.wosid000296525700058-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.12, no.1, pp.313 - 318-
dc.relation.isPartOfCURRENT APPLIED PHYSICS-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume12-
dc.citation.number1-
dc.citation.startPage313-
dc.citation.endPage318-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001629374-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSILICON-NITRIDE-
dc.subject.keywordPlusSURFACE PASSIVATION-
dc.subject.keywordPlusBULK-
dc.subject.keywordAuthorAluminum-
dc.subject.keywordAuthorSilicon nitride-
dc.subject.keywordAuthorLocal contact-
dc.subject.keywordAuthorRear passivation-
dc.subject.keywordAuthorBack surface field-
dc.subject.keywordAuthorSolar cell-
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