A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells
- Authors
- Song, Jooyong; Park, Sungeun; Kwon, Soonwoo; Kim, Sungtak; Kim, Hyunho; Tark, Sung Ju; Yoon, Sewang; Kim, Donghwan
- Issue Date
- 1월-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Aluminum; Silicon nitride; Local contact; Rear passivation; Back surface field; Solar cell
- Citation
- CURRENT APPLIED PHYSICS, v.12, no.1, pp.313 - 318
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Number
- 1
- Start Page
- 313
- End Page
- 318
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/109129
- DOI
- 10.1016/j.cap.2011.06.028
- ISSN
- 1567-1739
- Abstract
- The relationship between aluminum fire-through and the properties of a-SiNx:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films. Refractive index, density and deposition rate increased with increasing SiH4/NH3 ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiNx:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate. (C) 2011 Elsevier B. V. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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