Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, T. S. | - |
dc.contributor.author | Wang, X. T. | - |
dc.contributor.author | Lo, C. F. | - |
dc.contributor.author | Ren, F. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.contributor.author | Laboutin, O. | - |
dc.contributor.author | Cao, Yu | - |
dc.contributor.author | Johnson, J. W. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-06T23:25:04Z | - |
dc.date.available | 2021-09-06T23:25:04Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/109168 | - |
dc.description.abstract | A finite element simulation was used to estimate the temperature distributions within AlGaN/GaN high electron mobility transistors (HEMTs) during the laser lift-off process. The time-dependent simulation showed that a thin layer of GaN at the GaN/sapphire interface was heated up to around 1600 K in less than 25 ns by a pulsed laser exposure with a duration of 25 ns and a fluence of 800 mJ/cm(2) to decompose this GaN layer into Ga and nitrogen. Experimentally, there was a threshold fluence around 550 mJ/cm(2), corresponding to 1300 K at the GaN/sapphire interface, for partially lifting off the HEMT structure from the sapphire. The simulated temperature at the GaN/sapphire interface with a fluence of 420 mJ/cm(2) never reached above 1000 K, however, the HEMT structure was lifted-off by multiple laser exposures at this fluence. Therefore, instead of thermally induced decomposition, the lift-off mechanism could also be through the Ga-N bond breaking during the multiple lower-fluence high-energy 193 nm laser exposures. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664283] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | GAN | - |
dc.subject | SUBSTRATE | - |
dc.subject | HEMTS | - |
dc.title | Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.3664283 | - |
dc.identifier.wosid | 000299388200011 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.1 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 30 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | HEMTS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.