Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors
- Authors
- Kang, T. S.; Wang, X. T.; Lo, C. F.; Ren, F.; Pearton, S. J.; Laboutin, O.; Cao, Yu; Johnson, J. W.; Kim, Jihyun
- Issue Date
- 1월-2012
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.1
- Indexed
- SCIE
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 30
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/109168
- DOI
- 10.1116/1.3664283
- ISSN
- 1071-1023
- Abstract
- A finite element simulation was used to estimate the temperature distributions within AlGaN/GaN high electron mobility transistors (HEMTs) during the laser lift-off process. The time-dependent simulation showed that a thin layer of GaN at the GaN/sapphire interface was heated up to around 1600 K in less than 25 ns by a pulsed laser exposure with a duration of 25 ns and a fluence of 800 mJ/cm(2) to decompose this GaN layer into Ga and nitrogen. Experimentally, there was a threshold fluence around 550 mJ/cm(2), corresponding to 1300 K at the GaN/sapphire interface, for partially lifting off the HEMT structure from the sapphire. The simulated temperature at the GaN/sapphire interface with a fluence of 420 mJ/cm(2) never reached above 1000 K, however, the HEMT structure was lifted-off by multiple laser exposures at this fluence. Therefore, instead of thermally induced decomposition, the lift-off mechanism could also be through the Ga-N bond breaking during the multiple lower-fluence high-energy 193 nm laser exposures. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664283]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.