Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Song, June O. | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-06T23:38:18Z | - |
dc.date.available | 2021-09-06T23:38:18Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/109243 | - |
dc.description.abstract | We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 x 10(-4) Omega cm(2). Upon annealing at 250 degrees C for 1 min in N-2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 x 10(-3) Omega cm(2). Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed. (C) 2011 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TI/AL CONTACTS | - |
dc.subject | ELECTRICAL CHARACTERISTICS | - |
dc.subject | CRYSTAL-POLARITY | - |
dc.subject | SCHOTTKY DIODES | - |
dc.subject | METAL CONTACTS | - |
dc.subject | P-GAN | - |
dc.subject | FACE | - |
dc.subject | MECHANISM | - |
dc.subject | LAYER | - |
dc.title | Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.cap.2011.06.009 | - |
dc.identifier.scopusid | 2-s2.0-80054794239 | - |
dc.identifier.wosid | 000296525700043 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.12, no.1, pp.225 - 227 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 225 | - |
dc.citation.endPage | 227 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001629289 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TI/AL CONTACTS | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | SCHOTTKY DIODES | - |
dc.subject.keywordPlus | METAL CONTACTS | - |
dc.subject.keywordPlus | P-GAN | - |
dc.subject.keywordPlus | FACE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | N-polar n-type GaN | - |
dc.subject.keywordAuthor | Ohmic contact | - |
dc.subject.keywordAuthor | Cr/Al | - |
dc.subject.keywordAuthor | Vertical light-emitting diode | - |
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