Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes
- Authors
- Jeon, Joon-Woo; Lee, Sang Youl; Song, June O.; Seong, Tae-Yeon
- Issue Date
- 1월-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- N-polar n-type GaN; Ohmic contact; Cr/Al; Vertical light-emitting diode
- Citation
- CURRENT APPLIED PHYSICS, v.12, no.1, pp.225 - 227
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Number
- 1
- Start Page
- 225
- End Page
- 227
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/109243
- DOI
- 10.1016/j.cap.2011.06.009
- ISSN
- 1567-1739
- Abstract
- We investigated the electrical properties of Cr(30 nm)/Al(200 nm) contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Before annealing, both the samples show ohmic behaviors with a contact resistivity of 1.9-2.3 x 10(-4) Omega cm(2). Upon annealing at 250 degrees C for 1 min in N-2 ambient, the Ti/Al contacts become non-ohmic, while the Cr/Al contacts remain ohmic with a contact resistivity of 1.4 x 10(-3) Omega cm(2). Based on X-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed. (C) 2011 Elsevier B. V. All rights reserved.
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