Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Layer-by-layer assembled enzyme multilayers with adjustable memory performance and low power consumption via molecular-level control

Authors
Baek, HyunheeLee, ChanwooPark, JeongjuKim, YounghoonKoo, BonkeeShin, HyunjungWang, DayangCho, Jinhan
Issue Date
2012
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.22, no.11, pp.4645 - 4651
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS CHEMISTRY
Volume
22
Number
11
Start Page
4645
End Page
4651
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/109339
DOI
10.1039/c2jm16231h
ISSN
0959-9428
Abstract
Electrochemical properties of enzymes are of fundamental and practical importance in bio-electrochemical applications. These redox properties, which can cause the reversible changes in the current according to their redox reactions in solution, often depend on the chemical activity of transition metal ions as cofactors within the active sites of enzymes. Here, we demonstrate that the reversible resistance changes in enzyme-based multilayer films can be caused by the externally applied voltage as a result of charge trap/release of haem Fe-III/Fe-II redox couples in dry form. It is also demonstrated that the electrically bistable switching properties of redox enzymes can be applied to nonvolatile memory devices requiring low power consumption. For this study, cationic poly(allylamine hydrochloride) (PAH) was alternately layer-by-layer assembled with anionic catalase enzyme onto Pt-coated substrates until the desired number of layers was deposited. A top electrode was deposited onto (PAH/catalase)(n) multilayer films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon depending on the voltage polarity (i.e., bipolar switching) was observed at low operating voltages (RESET at 1.8 V and SET voltage at -1.5 V), fast switching speed at the nanosecond level, and an ON/OFF current ratio of similar to 10(2). In the case of inserting insulating layers of about 2 nm thickness between adjacent catalase (CAT) layers, these devices exhibited the higher memory performance (ON/OFF current ratio of similar to 10(6)) and the lower power consumption than those of (PAH/CAT)(15) multilayer devices.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Cho, Jin han photo

Cho, Jin han
공과대학 (화공생명공학과)
Read more

Altmetrics

Total Views & Downloads

BROWSE