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Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature

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dc.contributor.authorKim, S.-
dc.contributor.authorCho, K.-
dc.contributor.authorKwak, K.-
dc.contributor.authorKim, S.-
dc.date.accessioned2021-09-07T04:03:01Z-
dc.date.available2021-09-07T04:03:01Z-
dc.date.created2021-06-17-
dc.date.issued2012-
dc.identifier.issn1229-7607-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/110607-
dc.description.abstractIn this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and 3.2×10 12 cm -2, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after 10 4 s. © 2012 KIEEME. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.subjectAverage size-
dc.subjectCapacitance-voltage curve-
dc.subjectHigh frequency HF-
dc.subjectOxide layer-
dc.subjectPt nanoparticles-
dc.subjectRoom temperature-
dc.subjectSputter-
dc.subjectData storage equipment-
dc.subjectDielectric devices-
dc.subjectNanoparticles-
dc.subjectPlatinum-
dc.subjectMOS capacitors-
dc.titleMemory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, S.-
dc.identifier.doi10.4313/TEEM.2012.13.3.162-
dc.identifier.scopusid2-s2.0-84862680995-
dc.identifier.bibliographicCitationTransactions on Electrical and Electronic Materials, v.13, no.3, pp.162 - 164-
dc.relation.isPartOfTransactions on Electrical and Electronic Materials-
dc.citation.titleTransactions on Electrical and Electronic Materials-
dc.citation.volume13-
dc.citation.number3-
dc.citation.startPage162-
dc.citation.endPage164-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001667181-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.subject.keywordPlusAverage size-
dc.subject.keywordPlusCapacitance-voltage curve-
dc.subject.keywordPlusHigh frequency HF-
dc.subject.keywordPlusOxide layer-
dc.subject.keywordPlusPt nanoparticles-
dc.subject.keywordPlusRoom temperature-
dc.subject.keywordPlusSputter-
dc.subject.keywordPlusData storage equipment-
dc.subject.keywordPlusDielectric devices-
dc.subject.keywordPlusNanoparticles-
dc.subject.keywordPlusPlatinum-
dc.subject.keywordPlusMOS capacitors-
dc.subject.keywordAuthorMemory-
dc.subject.keywordAuthorNanoparticle-
dc.subject.keywordAuthorPt-
dc.subject.keywordAuthorSputter-
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