Nanostructured n-ZnO/thin film p-silicon heterojunction light-emitting diodes
- Authors
- Ahn, Jaehui; Park, Hyunik; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R., Jr.; Kim, Jihyun
- Issue Date
- 19-12월-2011
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS EXPRESS, v.19, no.27, pp.26006 - 26010
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS EXPRESS
- Volume
- 19
- Number
- 27
- Start Page
- 26006
- End Page
- 26010
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/110899
- DOI
- 10.1364/OE.19.026006
- ISSN
- 1094-4087
- Abstract
- Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap. (C) 2011 Optical Society of America
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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