Effect of reflector bias voltage on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sun Gyu | - |
dc.contributor.author | Jang, Jin-Nyoung | - |
dc.contributor.author | Hong, MunPyo | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.date.accessioned | 2021-09-07T05:35:20Z | - |
dc.date.available | 2021-09-07T05:35:20Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-12 | - |
dc.identifier.issn | 1882-0743 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111016 | - |
dc.description.abstract | In the present study, the effects of reflector bias voltage on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various reflector bias voltages. During deposition, the substrate temperature was kept at room temperature. Nanocrystalline Si embedded in an amorphous matrix structure was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high reflector voltage formed large grains due to largely accumulated internal energy. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon was revealed to have only metallic Si bonds. Further, an increase in reflector voltage induced a roughened surface morphology, an increased dark conductivity, and a decreased optical band gap in Si films. (C)2011 The Ceramic Society of Japan. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI | - |
dc.subject | BAND-GAP | - |
dc.subject | IONS | - |
dc.subject | SI | - |
dc.title | Effect of reflector bias voltage on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, MunPyo | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.2109/jcersj2.119.922 | - |
dc.identifier.scopusid | 2-s2.0-82755162679 | - |
dc.identifier.wosid | 000298224500004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, v.119, no.1396, pp.922 - 925 | - |
dc.relation.isPartOf | JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | - |
dc.citation.title | JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | - |
dc.citation.volume | 119 | - |
dc.citation.number | 1396 | - |
dc.citation.startPage | 922 | - |
dc.citation.endPage | 925 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | IONS | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | Nanocrystalline silicon | - |
dc.subject.keywordAuthor | Reactive particle beam | - |
dc.subject.keywordAuthor | ICP CVD | - |
dc.subject.keywordAuthor | Reflector | - |
dc.subject.keywordAuthor | Bias voltage | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.