Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yun-Hi | - |
dc.contributor.author | Park, Sungim | - |
dc.date.accessioned | 2021-09-07T05:41:34Z | - |
dc.date.available | 2021-09-07T05:41:34Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-12 | - |
dc.identifier.issn | 1468-6996 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111051 | - |
dc.description.abstract | Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 degrees C and characterized the produced devices consisting of a p(+)-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.subject | CONTROLLED GROWTH | - |
dc.subject | FABRICATION | - |
dc.subject | TRANSPORT | - |
dc.subject | DIRECTION | - |
dc.subject | ARRAYS | - |
dc.subject | GOLD | - |
dc.title | Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Yun-Hi | - |
dc.identifier.doi | 10.1088/1468-6996/12/6/065004 | - |
dc.identifier.scopusid | 2-s2.0-84855470741 | - |
dc.identifier.wosid | 000299695200016 | - |
dc.identifier.bibliographicCitation | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.12, no.6 | - |
dc.relation.isPartOf | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | - |
dc.citation.title | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | CONTROLLED GROWTH | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DIRECTION | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | GOLD | - |
dc.subject.keywordAuthor | Si nanowires | - |
dc.subject.keywordAuthor | nanowire junction | - |
dc.subject.keywordAuthor | low-pressure chemical vapor deposition | - |
dc.subject.keywordAuthor | LPCVD | - |
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