Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes
- Authors
- Lee, Yun-Hi; Park, Sungim
- Issue Date
- 12월-2011
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Si nanowires; nanowire junction; low-pressure chemical vapor deposition; LPCVD
- Citation
- SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.12, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Volume
- 12
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111051
- DOI
- 10.1088/1468-6996/12/6/065004
- ISSN
- 1468-6996
- Abstract
- Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 degrees C and characterized the produced devices consisting of a p(+)-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.