Effect of Ag doping on the performance of ZnO thin film transistor

Abstract

Ag-doped zinc oxide (SZO) thin film transistors (TFTs) have been fabricated using a back-gate structure on thermally oxidized and heavily doped p-Si (100) substrate. The SZO thin films were deposited via pulsed laser deposition (PLD) from a 1, 3, and 5 wt.% Ag-doped ZnO (1SZO, 3SZO, and 5SZO, respectively) target using a KrF excimer laser (lambda, 248 nm) at oxygen pressure of 350 mTorr. The deposition carried out at both room-temperature (RT) and 200 degrees C. The SZO thin films had polycrystalline phase with preferred growth direction of (002) as well as a wurtzite hexagonal structure. Compare with ZnO thin films, the SZO thin films were characterized by confirming the shift of (002) peak to investigate the substitution of Ag dopants for Zn sites. The as-grown SZO TFTs deposited at RT and 200 degrees C showed insulator characteristics. However the SZO TFTs annealed at 500 degrees C showed good n-type TFT performance because Ag was diffused from Zn lattice site and bound themselves at the high temperature, and it caused generation of electron carriers. The post-annealed 5SZO TFT deposited at 500 degrees C exhibited a threshold voltage (V(th)) of 11.5 V, a subthreshold swing (SS) of 2.59 V/decade, an acceptable mobility (mu(SAT)) of 0.874 cm(2)/V s, and on-to-off current ratios (I(on/off)) of 1.44x10(8). (C) 2011 Elsevier B.V. All rights reserved.