Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations
DC Field | Value | Language |
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dc.contributor.author | Yoon, Changjoon | - |
dc.contributor.author | Moon, Taeho | - |
dc.contributor.author | Lee, Myeongwon | - |
dc.contributor.author | Cho, Gyoujin | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-07T06:04:45Z | - |
dc.date.available | 2021-09-07T06:04:45Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-11-18 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111134 | - |
dc.description.abstract | High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (similar to 3300 cm(2) V-1 s(-1)), large I-on/I-off ratio (similar to 10(8)) and small subthreshold swing (similar to 70 mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100 MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | CIRCUITS | - |
dc.subject | ELECTRONICS | - |
dc.subject | FABRICATION | - |
dc.subject | ASSEMBLIES | - |
dc.subject | ARRAYS | - |
dc.title | Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1088/0957-4484/22/46/465202 | - |
dc.identifier.scopusid | 2-s2.0-80155147359 | - |
dc.identifier.wosid | 000296758800005 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.22, no.46 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 22 | - |
dc.citation.number | 46 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | ASSEMBLIES | - |
dc.subject.keywordPlus | ARRAYS | - |
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