Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors
DC Field | Value | Language |
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dc.contributor.author | Lo, C. F. | - |
dc.contributor.author | Liu, L. | - |
dc.contributor.author | Ren, F. | - |
dc.contributor.author | Kim, H. -Y. | - |
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.contributor.author | Laboutin, O. | - |
dc.contributor.author | Cao, Yu | - |
dc.contributor.author | Johnson, J. W. | - |
dc.contributor.author | Kravchenko, I. I. | - |
dc.date.accessioned | 2021-09-07T06:26:26Z | - |
dc.date.available | 2021-09-07T06:26:26Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-11 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111180 | - |
dc.description.abstract | The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 x 10(11) to 2 x 10(15) cm(-2). The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 x 10(15) cm(-2), both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 x 10(11) to 2 x 10(15) cm(-2) exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3644480] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | PERFORMANCE | - |
dc.subject | GAN | - |
dc.title | Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, J. | - |
dc.identifier.doi | 10.1116/1.3644480 | - |
dc.identifier.scopusid | 2-s2.0-84255184252 | - |
dc.identifier.wosid | 000298538800105 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.6 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 29 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | high electron mobility transistors | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | proton effects | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
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