Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors
- Authors
- Lo, C. F.; Liu, L.; Ren, F.; Kim, H. -Y.; Kim, J.; Pearton, S. J.; Laboutin, O.; Cao, Yu; Johnson, J. W.; Kravchenko, I. I.
- Issue Date
- 11월-2011
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; III-V semiconductors; indium compounds; proton effects; wide band gap semiconductors
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 29
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111180
- DOI
- 10.1116/1.3644480
- ISSN
- 1071-1023
- Abstract
- The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 x 10(11) to 2 x 10(15) cm(-2). The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 x 10(15) cm(-2), both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 x 10(11) to 2 x 10(15) cm(-2) exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3644480]
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