Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate
DC Field | Value | Language |
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dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Jang, Jong-Jin | - |
dc.contributor.author | Nam, Okhyun | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-07T06:37:46Z | - |
dc.date.available | 2021-09-07T06:37:46Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-11 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111241 | - |
dc.description.abstract | In this study, a 2 in. sized a highly periodic nanometer-scaled patterned sapphire substrate (NPSS) was fabricated using nanoimprint lithography (NIL) and inductively coupled plasma etching to improve the light-extraction efficiency of GaN-based light-emitting diodes (LEDs). A blue LED structure was grown on the nanometer-scale patterned sapphire substrates, and the photoluminescence (PL) and electroluminescence (EL) were measured to confirm the effectiveness of the nanometer-scaled patterns on sapphire. An improvement in luminescence efficiency was observed when NPSS was applied; 2 times stronger PL intensity and 2.8 times stronger EL intensity than the LED structure grown on the unpatterned sapphire wafers were measured. These results show highly periodic nanometer-scaled patterns create multi-photon scattering and effectively enhance the light-extraction efficiency of LEDs. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | INDUCTIVELY-COUPLED PLASMAS | - |
dc.subject | NANOIMPRINT LITHOGRAPHY | - |
dc.subject | FABRICATION | - |
dc.title | Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1016/j.mee.2011.07.014 | - |
dc.identifier.scopusid | 2-s2.0-80053344027 | - |
dc.identifier.wosid | 000298461700003 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.88, no.11, pp.3207 - 3213 | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 88 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 3207 | - |
dc.citation.endPage | 3213 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | INDUCTIVELY-COUPLED PLASMAS | - |
dc.subject.keywordPlus | NANOIMPRINT LITHOGRAPHY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Nanoimprint lithography (NIL) | - |
dc.subject.keywordAuthor | GaN-based light-emitting diodes (LEDs) | - |
dc.subject.keywordAuthor | Nanometer-scaled patterned sapphire | - |
dc.subject.keywordAuthor | substrate (NPSS) | - |
dc.subject.keywordAuthor | Photoluminescence (PL) | - |
dc.subject.keywordAuthor | Electroluminescence (EL) | - |
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