Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Se-Yeon | - |
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Song, June-O | - |
dc.contributor.author | Jin, Sungho | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-07T06:43:10Z | - |
dc.date.available | 2021-09-07T06:43:10Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2011-11 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111273 | - |
dc.description.abstract | We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400A degrees C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400A degrees C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | EXTRACTION EFFICIENCY | - |
dc.subject | SURFACES | - |
dc.subject | ALLOY | - |
dc.subject | NI/AU | - |
dc.subject | FILMS | - |
dc.subject | AU | - |
dc.title | Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1007/s11664-011-1745-3 | - |
dc.identifier.scopusid | 2-s2.0-83155181566 | - |
dc.identifier.wosid | 000295365500001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.40, no.11, pp.2173 - 2178 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 40 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2173 | - |
dc.citation.endPage | 2178 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | ALLOY | - |
dc.subject.keywordPlus | NI/AU | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | AU | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
dc.subject.keywordAuthor | AgNi | - |
dc.subject.keywordAuthor | ohmic contact | - |
dc.subject.keywordAuthor | reflectivity | - |
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