Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts
- Authors
- Jung, Se-Yeon; Lee, Sang Youl; Song, June-O; Jin, Sungho; Seong, Tae-Yeon
- Issue Date
- 11월-2011
- Publisher
- SPRINGER
- Keywords
- Light-emitting diodes; AgNi; ohmic contact; reflectivity
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.40, no.11, pp.2173 - 2178
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 40
- Number
- 11
- Start Page
- 2173
- End Page
- 2178
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111273
- DOI
- 10.1007/s11664-011-1745-3
- ISSN
- 0361-5235
- Abstract
- We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400A degrees C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400A degrees C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.
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